An Electrostatically Driven-Capacitively Sensed Silicon Resonator Based on SOI-MEMS Technology
文献类型：期刊论文
| 作者 | 焦海龙，陈德勇，王军波 |
| 刊名 | Nanotechnology and Precision Engineering
 |
| 出版日期 | 2013 |
| 卷号 | 11期号:5页码:447 |
| 公开日期 | 2014-04-14 |
| 源URL | [http://159.226.65.12/handle/80137/10052]  |
| 专题 | 电子学研究所_传感技术国家重点实验室（北方基地）_传感技术国家重点实验室（北方基地）_期刊论文 |
| 推荐引用方式 GB/T 7714 | 焦海龙，陈德勇，王军波. An Electrostatically Driven-Capacitively Sensed Silicon Resonator Based on SOI-MEMS Technology[J]. Nanotechnology and Precision Engineering,2013,11(5):447. |
| APA | 焦海龙，陈德勇，王军波.(2013).An Electrostatically Driven-Capacitively Sensed Silicon Resonator Based on SOI-MEMS Technology.Nanotechnology and Precision Engineering,11(5),447. |
| MLA | 焦海龙，陈德勇，王军波."An Electrostatically Driven-Capacitively Sensed Silicon Resonator Based on SOI-MEMS Technology".Nanotechnology and Precision Engineering 11.5(2013):447. |
入库方式： OAI收割
来源：电子学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。