Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Su XJ(苏旭军)
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014-08-25 |
| 卷号 | 105期号:8 |
| 关键词 | YELLOW LUMINESCENCE STACKING-FAULTS IMPURITY INCORPORATION |
| 通讯作者 | Zhang, JC |
| 英文摘要 | The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation. (C) 2014 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000342753500043 |
| 公开日期 | 2014-11-27 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1599]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Su XJ. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition[J]. APPLIED PHYSICS LETTERS,2014,105(8). |
| APA | Su XJ.(2014).Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition.APPLIED PHYSICS LETTERS,105(8). |
| MLA | Su XJ."Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition".APPLIED PHYSICS LETTERS 105.8(2014). |
入库方式： OAI收割
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