Electron-induced damage to NPN transistors under different fluxes
文献类型：期刊论文
| 作者 | Zheng Yuzhan; Lu Wu; Ren Diyuan; Guo Qi ; Yu Xuefeng; Lue Xiaolong
|
| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
 |
| 出版日期 | 2008 |
| 卷号 | 19期号:6页码:333-336 |
| 关键词 | Electron flux NPN transistor Radiation damage |
| ISSN号 | 1001-8042 |
| 通讯作者 | Lu, W |
| 英文摘要 | Radiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this article. It has been shown that when NPN transistors were irradiated to a given fluence at different electron fluxes, the shift of base current was dependent on flux. With electron flux decreasing, the shift of base current becomes larger, while collector current almost keeps constant. Thus, more degradation of NPN transistors could be caused by low-electron-flux irradiation, similar to enhanced low-dose-rate sensitivity (ELDRS) of transistors under (60)Co gamma-irradiation. Finally, the underlying mechanisms were discussed here. |
| 收录类别 | SCI |
| WOS记录号 | WOS:000263318600004 |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4083]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng Yuzhan,Lu Wu,Ren Diyuan,et al. Electron-induced damage to NPN transistors under different fluxes[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19(6):333-336. |
| APA | Zheng Yuzhan,Lu Wu,Ren Diyuan,Guo Qi,Yu Xuefeng,&Lue Xiaolong.(2008).Electron-induced damage to NPN transistors under different fluxes.NUCLEAR SCIENCE AND TECHNIQUES,19(6),333-336. |
| MLA | Zheng Yuzhan,et al."Electron-induced damage to NPN transistors under different fluxes".NUCLEAR SCIENCE AND TECHNIQUES 19.6(2008):333-336. |
入库方式： OAI收割
来源：新疆理化技术研究所
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