Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
文献类型：期刊论文
| 作者 | Zheng, Qiwen; Yu, Xuefeng ; Cui, Jiangwei; Guo, Qi; Cong, Zhongchao; Zhang, Xingyao; Deng, Wei; Zhang, Xiaofu; Wu, Zhengxin
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| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:7页码:074008-1-074008-6 |
| 关键词 | silicon-on-insulator hot-carrier effect hump back gate |
| ISSN号 | 16744926 |
| 通讯作者 | yuxf |
| 英文摘要 | The hot-carrier effect characteristic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress. The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device. The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel. At low gate voltage, there is a hump in the sub-threshold curve of the back gate transistor, and it does not shift in the same way as the main transistor under stress. While under the same condition, there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail. |
| 收录类别 | EI |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4151]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Zheng, Qiwen,Yu, Xuefeng,Cui, Jiangwei,et al. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. Journal of Semiconductors,2013,34(7):074008-1-074008-6. |
| APA | Zheng, Qiwen.,Yu, Xuefeng.,Cui, Jiangwei.,Guo, Qi.,Cong, Zhongchao.,...&Wu, Zhengxin.(2013).Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress.Journal of Semiconductors,34(7),074008-1-074008-6. |
| MLA | Zheng, Qiwen,et al."Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress".Journal of Semiconductors 34.7(2013):074008-1-074008-6. |
入库方式： OAI收割
来源：新疆理化技术研究所
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