中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

文献类型:期刊论文

作者Wang, Xin; Lu, Wu; Guo, Qi; Wu, Xue; Xi, Shanbin; Deng, Wei; Cui, Jiangwei; Zhang, Jinxin
刊名Journal of Semiconductors
出版日期2013
卷号34期号:12
ISSN号16744926
通讯作者Lu, W.
中文摘要A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by 60Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.
收录类别EI
公开日期2014-11-11
源URL[http://ir.xjipc.cas.cn/handle/365002/4153]  
专题新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室
新疆理化技术研究所_材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Wang, Xin,Lu, Wu,Guo, Qi,et al. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. Journal of Semiconductors,2013,34(12).
APA Wang, Xin.,Lu, Wu.,Guo, Qi.,Wu, Xue.,Xi, Shanbin.,...&Zhang, Jinxin.(2013).Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters.Journal of Semiconductors,34(12).
MLA Wang, Xin,et al."Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters".Journal of Semiconductors 34.12(2013).

入库方式: OAI收割

来源:新疆理化技术研究所

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