Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters
文献类型:期刊论文
作者 | Wang, Xin; Lu, Wu![]() ![]() |
刊名 | Journal of Semiconductors
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出版日期 | 2013 |
卷号 | 34期号:12 |
ISSN号 | 16744926 |
通讯作者 | Lu, W. |
中文摘要 | A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by 60Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology. |
收录类别 | EI |
公开日期 | 2014-11-11 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/4153] ![]() |
专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 新疆理化技术研究所_材料物理与化学研究室 |
作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China |
推荐引用方式 GB/T 7714 | Wang, Xin,Lu, Wu,Guo, Qi,et al. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. Journal of Semiconductors,2013,34(12). |
APA | Wang, Xin.,Lu, Wu.,Guo, Qi.,Wu, Xue.,Xi, Shanbin.,...&Zhang, Jinxin.(2013).Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters.Journal of Semiconductors,34(12). |
MLA | Wang, Xin,et al."Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters".Journal of Semiconductors 34.12(2013). |
入库方式: OAI收割
来源:新疆理化技术研究所
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