Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter
文献类型：期刊论文
| 作者 | Wu, Xue; Lu, Wu ; Wang, Yiyuan; Xu, Jialing; Zhang, Leqing; Lu, Jian; Yu, Xin; Zhang, Xingyao; Hu, Tianle
|
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:1 |
| ISSN号 | 16744926 |
| 通讯作者 | Lu, W |
| 中文摘要 | The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail. |
| 收录类别 | EI |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4154]  |
| 专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang University, Urumqi 830046, China |
| 推荐引用方式 GB/T 7714 | Wu, Xue,Lu, Wu,Wang, Yiyuan,et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. Journal of Semiconductors,2013,34(1). |
| APA | Wu, Xue.,Lu, Wu.,Wang, Yiyuan.,Xu, Jialing.,Zhang, Leqing.,...&Hu, Tianle.(2013).Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter.Journal of Semiconductors,34(1). |
| MLA | Wu, Xue,et al."Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter".Journal of Semiconductors 34.1(2013). |
入库方式： OAI收割
来源：新疆理化技术研究所
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