Double humps and radiation effects of SOI NMOSFET
文献类型：期刊论文
| 作者 | Cui, Jiangwei; Yu, Xuefeng ; Ren, Diyuan; He, Chengfa; Gao, Bo; Li, Ming; Lu, Jian
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| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:6 |
| ISSN号 | 16744926 |
| 英文摘要 | Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor. |
| 收录类别 | EI |
| WOS记录号 | CSCD:4391584 |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4158]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Cui, Jiangwei,Yu, Xuefeng,Ren, Diyuan,et al. Double humps and radiation effects of SOI NMOSFET[J]. Journal of Semiconductors,2011,32(6). |
| APA | Cui, Jiangwei.,Yu, Xuefeng.,Ren, Diyuan.,He, Chengfa.,Gao, Bo.,...&Lu, Jian.(2011).Double humps and radiation effects of SOI NMOSFET.Journal of Semiconductors,32(6). |
| MLA | Cui, Jiangwei,et al."Double humps and radiation effects of SOI NMOSFET".Journal of Semiconductors 32.6(2011). |
入库方式： OAI收割
来源：新疆理化技术研究所
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