Total dose ionizing irradiation effects on a static random access memory field programmable gate array
文献类型：期刊论文
| 作者 | Gao, Bo; Yu, Xuefeng ; Ren, Diyuan; Li, Yudong; Sun, Jing; Cui, Jiangwei; Wang, Yiyuan; Li, Ming
|
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2012 |
| 卷号 | 33期号:3 |
| ISSN号 | 16744926 |
| 通讯作者 | Yu, X. |
| 英文摘要 | SRAM-based FPGA devices are irradiated by 60Co γ rays at various dose rates to investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak - peak value, and delay time on total dose are discussed. The experiment results show that the static power current of the devices reduces rapidly at room temperature (25°C) and high temperature (80°C) annealing after irradiation. When the device is irradiated at a low dose rate, the delay time and peak - peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s. |
| 收录类别 | EI |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4162]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Gao, Bo,Yu, Xuefeng,Ren, Diyuan,et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array[J]. Journal of Semiconductors,2012,33(3). |
| APA | Gao, Bo.,Yu, Xuefeng.,Ren, Diyuan.,Li, Yudong.,Sun, Jing.,...&Li, Ming.(2012).Total dose ionizing irradiation effects on a static random access memory field programmable gate array.Journal of Semiconductors,33(3). |
| MLA | Gao, Bo,et al."Total dose ionizing irradiation effects on a static random access memory field programmable gate array".Journal of Semiconductors 33.3(2012). |
入库方式： OAI收割
来源：新疆理化技术研究所
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