中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

文献类型:期刊论文

作者Wang, Yiyuan; Lu, Wu; Ren, Diyuan; Guo, Qi; Yu, Xuefeng; Gao, Bo
刊名Journal of Semiconductors
出版日期2011
卷号32期号:3
ISSN号16744926
通讯作者Lu, W.
英文摘要A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect. The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases. Comparing the enhancement factors between zero and working biases, it was found that the ELDRS is more severe under zero bias conditions. This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.
收录类别EI
WOS记录号CSCD:4391500
公开日期2014-11-11
源URL[http://ir.xjipc.cas.cn/handle/365002/4164]  
专题新疆理化技术研究所_材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Wang, Yiyuan,Lu, Wu,Ren, Diyuan,et al. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. Journal of Semiconductors,2011,32(3).
APA Wang, Yiyuan,Lu, Wu,Ren, Diyuan,Guo, Qi,Yu, Xuefeng,&Gao, Bo.(2011).The enhanced low dose rate sensitivity of a linear voltage regulator with different biases.Journal of Semiconductors,32(3).
MLA Wang, Yiyuan,et al."The enhanced low dose rate sensitivity of a linear voltage regulator with different biases".Journal of Semiconductors 32.3(2011).

入库方式: OAI收割

来源:新疆理化技术研究所

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