The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
文献类型：期刊论文
| 作者 | Wang, Yiyuan; Lu, Wu ; Ren, Diyuan; Guo, Qi; Yu, Xuefeng; Gao, Bo
|
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:3 |
| ISSN号 | 16744926 |
| 通讯作者 | Lu, W. |
| 英文摘要 | A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect. The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases. Comparing the enhancement factors between zero and working biases, it was found that the ELDRS is more severe under zero bias conditions. This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices. |
| 收录类别 | EI |
| WOS记录号 | CSCD:4391500 |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4164]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Wang, Yiyuan,Lu, Wu,Ren, Diyuan,et al. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. Journal of Semiconductors,2011,32(3). |
| APA | Wang, Yiyuan,Lu, Wu,Ren, Diyuan,Guo, Qi,Yu, Xuefeng,&Gao, Bo.(2011).The enhanced low dose rate sensitivity of a linear voltage regulator with different biases.Journal of Semiconductors,32(3). |
| MLA | Wang, Yiyuan,et al."The enhanced low dose rate sensitivity of a linear voltage regulator with different biases".Journal of Semiconductors 32.3(2011). |
入库方式： OAI收割
来源：新疆理化技术研究所
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