Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
文献类型:期刊论文
作者 | Cui, Jiangwei; Xue, Yaoguo; Yu, Xuefeng![]() |
刊名 | Journal of Semiconductors
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出版日期 | 2012 |
卷号 | 33期号:1 |
ISSN号 | 16744926 |
通讯作者 | Cui, J. |
英文摘要 | Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects. |
收录类别 | EI |
公开日期 | 2014-11-11 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/4165] ![]() |
专题 | 新疆理化技术研究所_材料物理与化学研究室 |
作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xi'An Microelectronic Technology Institute, Xi'an 710055, China |
推荐引用方式 GB/T 7714 | Cui, Jiangwei,Xue, Yaoguo,Yu, Xuefeng,et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs[J]. Journal of Semiconductors,2012,33(1). |
APA | Cui, Jiangwei,Xue, Yaoguo,Yu, Xuefeng,Ren, Diyuan,Lu, Jian,&Zhang, Xingyao.(2012).Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs.Journal of Semiconductors,33(1). |
MLA | Cui, Jiangwei,et al."Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs".Journal of Semiconductors 33.1(2012). |
入库方式: OAI收割
来源:新疆理化技术研究所
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