Dose-rate dependence of optically stimulated luminescence signal
文献类型：期刊论文
| 作者 | Pingqiang, Wei; Zhaoyang, Chen; Yanwei, Fan; Yurun, Sun; Yun, Zhao |
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:10 |
| ISSN号 | 16744926 |
| 通讯作者 | Zhaoyang, C |
| 英文摘要 | Optically stimulated luminescence (OSL) is the luminescence emitted from a semiconductor during its exposure to light. The OSL intensity is a function of the total dose absorbed by the sample. The dose-rate dependence of the OSL signal of the semiconductor CaS doped Ce and Sm was studied by numerical simulation and experiments. Based on a one-trap/one-center model, the whole OSL process was represented by a series of differential equations. The dose-rate properties of the materials were acquired theoretically by solving the equations. Good coherence was achieved between numerical simulation and experiments, both of which showed that the OSL signal was independent of dose rate. This result validates that when using OSL as a dosimetry technique, the dose-rate effect can be neglected. |
| 收录类别 | EI |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4173]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Pingqiang, Wei,Zhaoyang, Chen,Yanwei, Fan,et al. Dose-rate dependence of optically stimulated luminescence signal[J]. Journal of Semiconductors,2010,31(10). |
| APA | Pingqiang, Wei,Zhaoyang, Chen,Yanwei, Fan,Yurun, Sun,&Yun, Zhao.(2010).Dose-rate dependence of optically stimulated luminescence signal.Journal of Semiconductors,31(10). |
| MLA | Pingqiang, Wei,et al."Dose-rate dependence of optically stimulated luminescence signal".Journal of Semiconductors 31.10(2010). |
入库方式： OAI收割
来源：新疆理化技术研究所
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