Annealing behavior of radiation damage in JFET-input operational amplifiers
文献类型：期刊论文
| 作者 | Zheng, Yuzhan; Lu, Wu ; Ren, Diyuan; Wang, Yiyuan; Guo, Qi; Yu, Xuefeng
|
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:5页码:60-64 |
| 关键词 | JFET-input operational amplifiers dose rate radiation damage annealing behavior |
| ISSN号 | 16744926 |
| 通讯作者 | Lu, W. |
| 英文摘要 | The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage. |
| 收录类别 | EI |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4174]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,et al. Annealing behavior of radiation damage in JFET-input operational amplifiers[J]. Journal of Semiconductors,2009,30(5):60-64. |
| APA | Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,Wang, Yiyuan,Guo, Qi,&Yu, Xuefeng.(2009).Annealing behavior of radiation damage in JFET-input operational amplifiers.Journal of Semiconductors,30(5),60-64. |
| MLA | Zheng, Yuzhan,et al."Annealing behavior of radiation damage in JFET-input operational amplifiers".Journal of Semiconductors 30.5(2009):60-64. |
入库方式： OAI收割
来源：新疆理化技术研究所
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