Hot-carrier effects on irradiated deep submicron NMOSFET
文献类型：期刊论文
| 作者 | Cui, Jiangwei; Zheng, Qiwen; Yu, Xuefeng ; Cong, Zhongchao; Zhou, Hang; Guo, Qi; Wen, Lin; Wei, Ying; Ren, Diyuan
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| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:7 |
| ISSN号 | 16744926 |
| 英文摘要 | We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress. |
| 收录类别 | EI |
| 公开日期 | 2014-11-11 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/3920]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 固体辐射物理研究室 |
| 作者单位 | Key Laboratory of Functional Materials and Devices under Special Environments, Chinese Academy of Sciences, Xinjiang Technical Institute of Physics and Chemistry, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Cui, Jiangwei,Zheng, Qiwen,Yu, Xuefeng,et al. Hot-carrier effects on irradiated deep submicron NMOSFET[J]. Journal of Semiconductors,2014,35(7). |
| APA | Cui, Jiangwei.,Zheng, Qiwen.,Yu, Xuefeng.,Cong, Zhongchao.,Zhou, Hang.,...&Ren, Diyuan.(2014).Hot-carrier effects on irradiated deep submicron NMOSFET.Journal of Semiconductors,35(7). |
| MLA | Cui, Jiangwei,et al."Hot-carrier effects on irradiated deep submicron NMOSFET".Journal of Semiconductors 35.7(2014). |
入库方式： OAI收割
来源：新疆理化技术研究所
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