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Fluorine doping effects on the electric property of BiFeO3 thin films

文献类型：会议论文

作者XuFang Long ; ZhaoPeng Jun ; ZhangJia Qi ; XiongXin Qian
出版日期2014
会议名称2014 International Conference on Mechatronics, Materials and Manufacturing, ICMMM 2014
会议日期August 2, 2014 - August 4, 2014
会议地点Chengdu, China
页码161-164
中文摘要F doping BiFeO3-xFx (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO3 and F doping BiFeO3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.
收录类别EI
会议录出版地Trans Tech Publications Ltd
语种英语
ISSN号16609336
ISBN号9783038352259
源URL[http://ir.xjipc.cas.cn/handle/365002/3614]  
专题新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室
推荐引用方式
GB/T 7714		 XuFang Long,ZhaoPeng Jun,ZhangJia Qi,et al. Fluorine doping effects on the electric property of BiFeO3 thin films[C]. 见:2014 International Conference on Mechatronics, Materials and Manufacturing, ICMMM 2014. Chengdu, China. August 2, 2014 - August 4, 2014.

入库方式： OAI收割

来源：新疆理化技术研究所

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