Reactive sputtering deposition of Gd-doped AlN thin film
文献类型：会议论文
| 作者 | Wu, Rong (1) ; Pan, Dong (1) ; Jian, Jikang (2) ; Li, Jin (1) |
| 出版日期 | 2012 |
| 会议名称 | 2012 2nd International Conference on Advanced Materials and Information Technology Processing, AMITP 2012 |
| 会议日期 | October 17, 2012 - October 18, 2012 |
| 会议地点 | Taipei, Taiwan |
| 页码 | 221-224 |
| 通讯作者 | Wu, R.(wurongxju@sian.com) |
| 中文摘要 | Gd-doped AlN film was deposited on Si (222) substrate by Radio frequency reactive sputtering. XRD patterns show that the Gd-doped film maintains the hexagonal wurtzite structure with the (002) preferred c-axis orientation. The deposition film possesses similar smooth surface and homogenous grain size. A broad emission band centered at 444nm is observed and the band could be ascribed to the defects. The results show that Gd is a potential dopant for preparing magneto-electrical devices operating at room temperature. © (2012) Trans Tech Publications, Switzerland. |
| 收录类别 | EI |
| 会议录出版地 | Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany |
| 语种 | 英语 |
| ISSN号 | 10226680 |
| ISBN号 | 9783037855232 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/3648]  |
| 专题 | 新疆理化技术研究所_环境科学与技术研究室 |
| 推荐引用方式 GB/T 7714 | Wu, Rong ,Pan, Dong ,Jian, Jikang ,et al. Reactive sputtering deposition of Gd-doped AlN thin film[C]. 见:2012 2nd International Conference on Advanced Materials and Information Technology Processing, AMITP 2012. Taipei, Taiwan. October 17, 2012 - October 18, 2012. |
入库方式： OAI收割
来源：新疆理化技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。