SEE characteristics of small feature size devices by using laser backside testing
文献类型：期刊论文
| 作者 | Feng, Guoqiang; Shangguan, Shipeng; Ma, Yingqi; Han, Jianwei |
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2012 |
| 卷号 | 33期号:1 |
| ISSN号 | 1674-4926 |
| 通讯作者 | Feng, G. (gqfeng@cssar.ac.cn) |
| 中文摘要 | This paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal layers on the front side of integrated circuits. The influence of test data pattern on SEU threshold and cross-section is investigated. The supply current state of micro latch-up for deep sub-micron SRAM is described. The laser energy thresholds were correlated to heavy ion thresholds LET to determine an empirical relationship between laser energy threshold and heavy ion LET. This empirical relationship was used to estimate the equivalent laser LETs for devices fabricated in small feature sizes. Moreover, the SEU of a Power PC CPU fabricated with 90 nm SOI CMOS process has been tested, which indicates that the laser backside method could be used to evaluate SOI small feature size devices. © 2012 Chinese Institute of Electronics. |
| 英文摘要 | This paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal layers on the front side of integrated circuits. The influence of test data pattern on SEU threshold and cross-section is investigated. The supply current state of micro latch-up for deep sub-micron SRAM is described. The laser energy thresholds were correlated to heavy ion thresholds LET to determine an empirical relationship between laser energy threshold and heavy ion LET. This empirical relationship was used to estimate the equivalent laser LETs for devices fabricated in small feature sizes. Moreover, the SEU of a Power PC CPU fabricated with 90 nm SOI CMOS process has been tested, which indicates that the laser backside method could be used to evaluate SOI small feature size devices. © 2012 Chinese Institute of Electronics. |
| 学科主题 | 空间环境 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2014-12-15 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/2863]  |
| 专题 | 国家空间科学中心_保障部/保障与试验验证中心 |
| 推荐引用方式 GB/T 7714 | Feng, Guoqiang,Shangguan, Shipeng,Ma, Yingqi,et al. SEE characteristics of small feature size devices by using laser backside testing[J]. Journal of Semiconductors,2012,33(1). |
| APA | Feng, Guoqiang,Shangguan, Shipeng,Ma, Yingqi,&Han, Jianwei.(2012).SEE characteristics of small feature size devices by using laser backside testing.Journal of Semiconductors,33(1). |
| MLA | Feng, Guoqiang,et al."SEE characteristics of small feature size devices by using laser backside testing".Journal of Semiconductors 33.1(2012). |
入库方式： OAI收割
来源：国家空间科学中心
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