Graphene in ohmic contact for both n-GaN and p-GaN
文献类型：期刊论文
| 作者 | Zhong HJ(钟海舰) ; Huang ZL(黄增立); Xu K(徐科); Shi L(石林); Wang JF(王建峰); Xu GZ(徐耿钊); Fan YM(樊英民)
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2014-05-26 |
| 卷号 | 104期号:21 |
| 通讯作者 | 徐科 |
| 英文摘要 | The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I-V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices. (C) 2014 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000337143000023 |
| 公开日期 | 2014-12-06 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1658]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Zhong HJ,Huang ZL,Xu K,et al. Graphene in ohmic contact for both n-GaN and p-GaN[J]. APPLIED PHYSICS LETTERS,2014,104(21). |
| APA | Zhong HJ.,Huang ZL.,Xu K.,Shi L.,Wang JF.,...&Fan YM.(2014).Graphene in ohmic contact for both n-GaN and p-GaN.APPLIED PHYSICS LETTERS,104(21). |
| MLA | Zhong HJ,et al."Graphene in ohmic contact for both n-GaN and p-GaN".APPLIED PHYSICS LETTERS 104.21(2014). |
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