GaN PIN betavoltaic nuclear batteries
文献类型：期刊论文
| 作者 | Li, FH (李凤华) ; Gao, X (高 旭) ; Yuan, YL (Yuan YuanLin) ; Yuan, JS (Yuan JinShe) ; Lu, M (陆敏) |
| 刊名 | SCIENCE CHINA-TECHNOLOGICAL SCIENCES
 |
| 出版日期 | 2014-01 |
| 卷号 | 57期号:1页码:25-28 |
| 关键词 | GaN, PIN, nuclear battery, betavoltaic |
| 通讯作者 | Lu, M (陆敏) |
| 英文摘要 | GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage (I-V) characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor (FF) of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000329310200005 |
| 公开日期 | 2014-12-01 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1605]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Li, FH ,Gao, X ,Yuan, YL ,et al. GaN PIN betavoltaic nuclear batteries[J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2014,57(1):25-28. |
| APA | Li, FH ,Gao, X ,Yuan, YL ,Yuan, JS ,&Lu, M .(2014).GaN PIN betavoltaic nuclear batteries.SCIENCE CHINA-TECHNOLOGICAL SCIENCES,57(1),25-28. |
| MLA | Li, FH ,et al."GaN PIN betavoltaic nuclear batteries".SCIENCE CHINA-TECHNOLOGICAL SCIENCES 57.1(2014):25-28. |
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