Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
文献类型：期刊论文
| 作者 | Ceng ZM(曾中明) ; Zhang BS(张宝顺)
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014-09-01 |
| 卷号 | 105期号:9 |
| 关键词 | MONOLAYER MOS2 TRANSITION PHOTOTRANSISTORS NANOSHEETS CRYSTALS MOBILITY |
| 通讯作者 | 曾中明 |
| 英文摘要 | Extrinsic hysteresis effects are often observed in MoS2 field effect devices due to adsorption of gas molecules on the surface of MoS2 channel. Scaling is a common method used in ferroics to quantitatively study the hysteresis. Here, the scaling behavior of hysteresis in multilayer MoS2 field effect transistors with a back-gated configuration was investigated. The power-law scaling relations were obtained for hysteresis area (< A >) and memory window (Delta V) with varying the region of back-gate voltage (V-bg,V-max). It is interesting to find that the transition voltage in the forward sweep (V-FW) and in the backward sweep (V-BW) shifted to the opposite directions of back-gate voltage (Vbg) with increasing V-bg,V- max. However, when decreasing V-bg,V- max, V-FW shifted to positive and reversibly recovered, but V-BW almost kept unchanged. The evolution of < A >, Delta V, V-FW, and V-BW with V-bg,V- max were discussed by the electrons transferring process between the adsorbate and MoS2 channel. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000342749800051 |
| 公开日期 | 2014-12-01 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1615]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Ceng ZM,Zhang BS. Scaling behavior of hysteresis in multilayer MoS2 field effect transistors[J]. APPLIED PHYSICS LETTERS,2014,105(9). |
| APA | Ceng ZM,&Zhang BS.(2014).Scaling behavior of hysteresis in multilayer MoS2 field effect transistors.APPLIED PHYSICS LETTERS,105(9). |
| MLA | Ceng ZM,et al."Scaling behavior of hysteresis in multilayer MoS2 field effect transistors".APPLIED PHYSICS LETTERS 105.9(2014). |
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