中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Broadband mid-infrared luminescence of Bi2Se3 and doped crystals

文献类型:期刊论文

作者Xing HB(邢海波) ; Su LB(苏良碧) ; Chen XH(陈喜红) ; Fan X(范晓) ; Jiang XT(蒋先涛) ; Wu F(吴锋) ; Qian XB(钱小波) ; Xu J(徐军)
刊名Laser Physics
出版日期2014-02-10
卷号24期号:3页码:1
ISSN号1054-660X
其他题名Broadband mid-infrared luminescence of Bi2Se3 and doped crystals
中文摘要Pure and doped Bi2Se3 crystals were grown with the vertical Bridgman method. Broadband absorption and emission were detected. Annealing treatment and an xray photoelectron spectometry test revealed that the emission centre might be Bi clusters. The energy level transition diagrams of the MIR luminescent centres were fixed according to the absorption and emission spectra. The formation of Bi clusters and effects of Ca and Sb doping are discussed. A selfconsistent explanation on the mechani
学科主题人工晶体
语种中文
WOS记录号WOS:000331891500015
公开日期2014-12-18
源URL[http://ir.sic.ac.cn/handle/331005/4748]  
专题上海硅酸盐研究所_人工晶体研究中心_期刊论文
推荐引用方式
GB/T 7714
Xing HB,Su LB,Chen XH,et al. Broadband mid-infrared luminescence of Bi2Se3 and doped crystals[J]. Laser Physics,2014,24(3):1.
APA 邢海波.,苏良碧.,陈喜红.,范晓.,蒋先涛.,...&徐军.(2014).Broadband mid-infrared luminescence of Bi2Se3 and doped crystals.Laser Physics,24(3),1.
MLA 邢海波,et al."Broadband mid-infrared luminescence of Bi2Se3 and doped crystals".Laser Physics 24.3(2014):1.

入库方式: OAI收割

来源:上海硅酸盐研究所

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