Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study
文献类型：期刊论文
| 作者 | Ren, GQ (任国强) ; Xu, GZ (徐耿钊); Xu, K (徐科); Zhong, HJ (钟海舰); Shi, L (石林); Yang, H (杨辉); Wang, JF (王建峰); Fan, YM (樊英民)
|
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2014 |
| 卷号 | 115期号:1 |
| 关键词 | GRAPHITE FILMS DEVICES |
| 通讯作者 | Xu, K (徐科) |
| 英文摘要 | Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure. (C) 2014 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-01-05 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1722]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu, K (徐科) |
| 推荐引用方式 GB/T 7714 | Ren, GQ ,Xu, GZ ,Xu, K ,et al. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study[J]. JOURNAL OF APPLIED PHYSICS,2014,115(1). |
| APA | Ren, GQ .,Xu, GZ .,Xu, K .,Zhong, HJ .,Shi, L .,...&Fan, YM .(2014).Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study.JOURNAL OF APPLIED PHYSICS,115(1). |
| MLA | Ren, GQ ,et al."Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study".JOURNAL OF APPLIED PHYSICS 115.1(2014). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。