中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fast two-phonon relaxation process between the Landau levels of graphene on different polar substrates

文献类型:期刊论文

作者Wang, ZW (Wang, Zi-Wu) ; Liu, L (刘磊) ; Li, ZQ (Li, Zhi-Qing)
刊名EPL
出版日期2014
卷号108期号:3
关键词CARRIER MULTIPLICATION MAGNETIC-FIELD
通讯作者Wang, ZW (Wang, Zi-Wu)
英文摘要
Within the frame of Huang-Rhys's lattice relaxation model, we theoretically 
 
investigate the carrier relaxation mediated by two-phonon processes, which consists 
 
in polar surface optical phonon and longitudinal acoustic phonon emission between 
 
the Landau levels of graphene on different polar substrates. This two-phonon 
 
relaxation process is very fast within the picosecond scale and may seriously hinder 
 
the carrier multiplication based on effective Auger processes. Moreover, the 
 
polarizability of the polar substrate plays an important role in determining the 
 
relaxation time. These results could be helpful in designing graphene-based 
 
photoelectric and photodetector devices. Copyright (C) EPLA, 2014 
收录类别SCI
语种英语
公开日期2015-02-02
源URL[http://ir.sinano.ac.cn/handle/332007/1729]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式
GB/T 7714
Wang, ZW ,Liu, L ,Li, ZQ . Fast two-phonon relaxation process between the Landau levels of graphene on different polar substrates[J]. EPL,2014,108(3).
APA Wang, ZW ,Liu, L ,&Li, ZQ .(2014).Fast two-phonon relaxation process between the Landau levels of graphene on different polar substrates.EPL,108(3).
MLA Wang, ZW ,et al."Fast two-phonon relaxation process between the Landau levels of graphene on different polar substrates".EPL 108.3(2014).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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