Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design
文献类型：期刊论文
| 作者 | Huang, W (黄伟) ; Huang, HJ (黄宏娟); Cai, Y (蔡勇); Zhang, BS (张宝顺)
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| 刊名 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
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| 出版日期 | 2014 |
| 卷号 | 8期号:3页码:260-263 |
| 关键词 | high-power light-emitting diodes production yield GaN |
| 通讯作者 | Cai, Y (蔡勇) |
| 英文摘要 | : In this Letter, a GaN-based high-power (HP) single-chip (SC) large-area LED with parallel and series network structure is fabricated. The optical characteristics of the HP-SC LED is investigated. Driven at 600 mA, the optical output power of the HP-SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light-extraction efficiency degradation and the self-heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP-SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large-area LEDs. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000332928600011 |
| 公开日期 | 2015-02-03 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1784]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Cai, Y (蔡勇) |
| 推荐引用方式 GB/T 7714 | Huang, W ,Huang, HJ ,Cai, Y ,et al. Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2014,8(3):260-263. |
| APA | Huang, W ,Huang, HJ ,Cai, Y ,&Zhang, BS .(2014).Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,8(3),260-263. |
| MLA | Huang, W ,et al."Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 8.3(2014):260-263. |
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