Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method
文献类型：期刊论文
| 作者 | Zhang XL; Hui KS; Bin F; Hui KN; Li L; Cho YR; Mane RS; Zhou W; Bin F(宾峰)
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| 刊名 | SURFACE & COATINGS TECHNOLOGY
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| 出版日期 | 2015-01-15 |
| 卷号 | 261页码:149-155 |
| 通讯作者邮箱 | kshui@hanyang.ac.kr; bizhui@pusan.ac.kr |
| 关键词 | Al-Ni co-doped ZnO Annealing temperature Sol-gel method Forming gas |
| ISSN号 | 0257-8972 |
| 产权排序 | [Zhang, X. L.; Hui, K. N.; Li, Lei; Cho, Y. R.] Pusan Natl Univ, Sch Mat Sci & Engn, Pusan 609735, South Korea; [Hui, K. S.] Hanyang Univ, Dept Mech Convergence Engn, Seoul 133791, South Korea; [Bin, Feng] Chinese Acad Sci, Inst Mech, State Key Lab High Temperature Gas Dynam, Beijing 100080, Peoples R China; [Mane, Rajaram S.] SRTM Univ, Sch Phys Sci, Ctr Nanomat & Energy Devices, Nanded 431606, India; [Zhou, Wei] Xiamen Univ, Dept Mech & Elect Engn, Xiamen 361005, Peoples R China |
| 通讯作者 | Hui, KS (reprint author), Hanyang Univ, Dept Mech Convergence Engn, 17 Haengdang Dong, Seoul 133791, South Korea. |
| 合作状况 | 国际 |
| 中文摘要 | Al-Ni co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates using a sol-gel method. Based on a previous study, Zn-1 (-) xAlxO (AZO; Al/Zn = 1.5 mol%) thin films optimized with a Ni content of 0.5 mol% were annealed at different temperatures from 450 to 600 degrees C in N-2/H-2 (95/5) forming gas for 1 h. The effects of the annealing temperature on the structural, electrical and optical properties were determined. X-ray diffraction showed that NiAl:ZnO thin film annealed at 500 degrees C exhibited the best crystallization quality. XPS revealed the presence of metallic Ni and Ni2O3 states, as well as Ni and Al atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. Scanning electron microscopy showed that the films were smooth and compact, and the grain size increased with increasing annealing temperature from similar to 23.8 nm to similar to 34.6 nm. According to the Hall Effect measurements, when the temperature reached 500 degrees C the resistivity of the thin film showed the lowest value of 1.05 x 10(-3) (Omega cm), which is the lowest resistivity reported for NiAl:ZnO films. The UV-Vis transmission spectra showed a high transmittance of more than 80% in the visible light range, and the band gap of the films was increased from 3.30 to 3.55 eV. This study showed that the annealing temperature in the forming gas is a vital factor affecting the quality of thin films. In addition, 500 degrees C was found to be the most appropriate annealing temperature for NiAl:ZnO films. This study provides a simple and efficient method for preparing high quality, high transparency and low resistivity NiAl:ZnO films for optoelectronic applications. (C) 2014 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science ; Physics |
| 分类号 | 二类/Q1 |
| 收录类别 | SCI ; EI |
| 资助信息 | This work was supported by a 2-Year Research Grant of Pusan National University. |
| 原文出处 | http://dx.doi.org/10.1016/j.surfcoat.2014.11.043 |
| 语种 | 英语 |
| 公开日期 | 2015-03-17 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/49592]  |
| 专题 | 力学研究所_高温气体动力学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang XL,Hui KS,Bin F,et al. Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method[J]. SURFACE & COATINGS TECHNOLOGY,2015,261:149-155. |
| APA | Zhang XL.,Hui KS.,Bin F.,Hui KN.,Li L.,...&Bin F.(2015).Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method.SURFACE & COATINGS TECHNOLOGY,261,149-155. |
| MLA | Zhang XL,et al."Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method".SURFACE & COATINGS TECHNOLOGY 261(2015):149-155. |
入库方式： OAI收割
来源：力学研究所
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