Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics
文献类型:期刊论文
; | |
作者 | Wang, Xiaozhou; Yang, Shengxue; Yue, Qu; Wu, Fengmin; Li, Jingbo |
刊名 | journal of alloys and compounds ; JOURNAL OF ALLOYS AND COMPOUNDS |
出版日期 | 2014 ; 2014 |
卷号 | 615页码:989-993 |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2015-03-19 ; 2015-03-19 |
源URL | [http://ir.semi.ac.cn/handle/172111/25994] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Wang, Xiaozhou,Yang, Shengxue,Yue, Qu,et al. Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics, Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics[J]. journal of alloys and compounds, JOURNAL OF ALLOYS AND COMPOUNDS,2014, 2014,615, 615:989-993, 989-993. |
APA | Wang, Xiaozhou,Yang, Shengxue,Yue, Qu,Wu, Fengmin,&Li, Jingbo.(2014).Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics.journal of alloys and compounds,615,989-993. |
MLA | Wang, Xiaozhou,et al."Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics".journal of alloys and compounds 615(2014):989-993. |
入库方式: OAI收割
来源:半导体研究所
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