Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy
文献类型：期刊论文
| ; | |
| 作者 | Wang, J; Xing, JL; Xiang, W; Wang, GW; Xu, YQ; Ren, ZW; Niu, ZC |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 104期号:5页码:052111 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-19 ; 2015-03-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26013]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, J,Xing, JL,Xiang, W,et al. Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy, Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy[J]. applied physics letters, APPLIED PHYSICS LETTERS,2014, 2014,104, 104(5):052111, 052111. |
| APA | Wang, J.,Xing, JL.,Xiang, W.,Wang, GW.,Xu, YQ.,...&Niu, ZC.(2014).Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy.applied physics letters,104(5),052111. |
| MLA | Wang, J,et al."Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy".applied physics letters 104.5(2014):052111. |
入库方式： OAI收割
来源：半导体研究所
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