High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure
文献类型：期刊论文
| ; | |
| 作者 | Liu, Lei; Qu, Hongwei; Liu, Yun; Zhang, Yejin; Wang, Yufei; Qi, Aiyi; Zheng, Wanhua |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 105期号:23页码:231110 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-19 ; 2015-03-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/25992]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Liu, Lei,Qu, Hongwei,Liu, Yun,et al. High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure, High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure[J]. applied physics letters, APPLIED PHYSICS LETTERS,2014, 2014,105, 105(23):231110, 231110. |
| APA | Liu, Lei.,Qu, Hongwei.,Liu, Yun.,Zhang, Yejin.,Wang, Yufei.,...&Zheng, Wanhua.(2014).High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure.applied physics letters,105(23),231110. |
| MLA | Liu, Lei,et al."High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure".applied physics letters 105.23(2014):231110. |
入库方式： OAI收割
来源：半导体研究所
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