Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature
文献类型：期刊论文
| ; | |
| 作者 | Shang, ZJ; Zheng, XH; Yang, C; Chen, Y; Li, B; Sun, L; Tang, Z; Zhao, DG |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 105期号:23页码:232104 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-19 ; 2015-03-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/25993]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Shang, ZJ,Zheng, XH,Yang, C,et al. Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature, Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature[J]. applied physics letters, APPLIED PHYSICS LETTERS,2014, 2014,105, 105(23):232104, 232104. |
| APA | Shang, ZJ.,Zheng, XH.,Yang, C.,Chen, Y.,Li, B.,...&Zhao, DG.(2014).Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature.applied physics letters,105(23),232104. |
| MLA | Shang, ZJ,et al."Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature".applied physics letters 105.23(2014):232104. |
入库方式： OAI收割
来源：半导体研究所
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