Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ
文献类型：期刊论文
| ; | |
| 作者 | Liu, Yan; Yan, Jing; Wang, Hongjuan; Zhang,Qingfang; Liu, Mingshan; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan |
| 刊名 | ieee transactions on electron devices
 ; IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 61期号:11页码:3639-3645 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-20 ; 2015-03-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26103]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Liu, Yan,Yan, Jing,Wang, Hongjuan,et al. Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ, Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ[J]. ieee transactions on electron devices, IEEE TRANSACTIONS ON ELECTRON DEVICES,2014, 2014,61, 61(11):3639-3645, 3639-3645. |
| APA | Liu, Yan.,Yan, Jing.,Wang, Hongjuan.,Zhang,Qingfang.,Liu, Mingshan.,...&Han, Genquan.(2014).Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ.ieee transactions on electron devices,61(11),3639-3645. |
| MLA | Liu, Yan,et al."Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ".ieee transactions on electron devices 61.11(2014):3639-3645. |
入库方式： OAI收割
来源：半导体研究所
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