Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate
文献类型：期刊论文
| ; | |
| 作者 | Liu, Yan; Yan, Jing; Liu, Mingshan; Wang, Hongjuan; Zhang, Qingfang; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan |
| 刊名 | semiconductor science and technology
 ; SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 29期号:11页码:115027 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-19 ; 2015-03-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26012]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Liu, Yan,Yan, Jing,Liu, Mingshan,et al. Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate, Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate[J]. semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2014, 2014,29, 29(11):115027, 115027. |
| APA | Liu, Yan.,Yan, Jing.,Liu, Mingshan.,Wang, Hongjuan.,Zhang, Qingfang.,...&Han, Genquan.(2014).Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate.semiconductor science and technology,29(11),115027. |
| MLA | Liu, Yan,et al."Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate".semiconductor science and technology 29.11(2014):115027. |
入库方式： OAI收割
来源：半导体研究所
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