The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN
文献类型：期刊论文
| ; | |
| 作者 | Li, X. J.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G.; Zhang, S. M. |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 116期号:16页码:163708 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-19 ; 2015-03-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26024]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Li, X. J.,Zhao, D. G.,Jiang, D. S.,et al. The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN, The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2014, 2014,116, 116(16):163708, 163708. |
| APA | Li, X. J..,Zhao, D. G..,Jiang, D. S..,Liu, Z. S..,Chen, P..,...&Yang, H..(2014).The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN.journal of applied physics,116(16),163708. |
| MLA | Li, X. J.,et al."The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN".journal of applied physics 116.16(2014):163708. |
入库方式： OAI收割
来源：半导体研究所
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