Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures
文献类型：期刊论文
| 作者 | Wang, JM ; Xu, FJ ; Zhang, X ; An, W ; Li, XZ ; Song, J ; Ge, WK ; Tian, GS ; Lu, J ; Wang, XQ ; Tang, N ; Yang, ZJ ; Li, W ; Wang, WY ; Jin, P ; Chen, YH ; Shen, B |
| 刊名 | scientific reports
 |
| 出版日期 | 2014 |
| 卷号 | 4页码:6521 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-03-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26115]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, JM,Xu, FJ,Zhang, X,et al. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures[J]. scientific reports,2014,4:6521. |
| APA | Wang, JM.,Xu, FJ.,Zhang, X.,An, W.,Li, XZ.,...&Shen, B.(2014).Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures.scientific reports,4,6521. |
| MLA | Wang, JM,et al."Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures".scientific reports 4(2014):6521. |
入库方式： OAI收割
来源：半导体研究所
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