Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys
文献类型：期刊论文
| ; | |
| 作者 | Ma, J; Deng, HX; Luo, JW; Wei, SH |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 90期号:11页码:115201 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26183]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Ma, J,Deng, HX,Luo, JW,et al. Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys, Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys[J]. physical review b, PHYSICAL REVIEW B,2014, 2014,90, 90(11):115201, 115201. |
| APA | Ma, J,Deng, HX,Luo, JW,&Wei, SH.(2014).Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys.physical review b,90(11),115201. |
| MLA | Ma, J,et al."Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys".physical review b 90.11(2014):115201. |
入库方式： OAI收割
来源：半导体研究所
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