In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots
文献类型：期刊论文
| ; | |
| 作者 | Wu, XF; Wei, H; Dou, XM; He, LX; Sun, BQ; Ding, K; Yu, Y; Ni, HQ; Niu, ZC; Ji, Y |
| 刊名 | epl
 ; EPL
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 107期号:2页码:27008 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26257]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wu, XF,Wei, H,Dou, XM,et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots, In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots[J]. epl, EPL,2014, 2014,107, 107(2):27008, 27008. |
| APA | Wu, XF.,Wei, H.,Dou, XM.,He, LX.,Sun, BQ.,...&Guo, GC.(2014).In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots.epl,107(2),27008. |
| MLA | Wu, XF,et al."In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots".epl 107.2(2014):27008. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。