Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
文献类型:期刊论文
; | |
作者 | Jiang, XW; Gong, J; Xu, N; Li, SS; Zhang, JF; Hao, Y; Wang, LW |
刊名 | applied physics letters ; APPLIED PHYSICS LETTERS |
出版日期 | 2014 ; 2014 |
卷号 | 104期号:2页码:023512 |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2015-03-25 ; 2015-03-25 |
源URL | [http://ir.semi.ac.cn/handle/172111/26163] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Jiang, XW,Gong, J,Xu, N,et al. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects, Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects[J]. applied physics letters, APPLIED PHYSICS LETTERS,2014, 2014,104, 104(2):023512, 023512. |
APA | Jiang, XW.,Gong, J.,Xu, N.,Li, SS.,Zhang, JF.,...&Wang, LW.(2014).Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects.applied physics letters,104(2),023512. |
MLA | Jiang, XW,et al."Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects".applied physics letters 104.2(2014):023512. |
入库方式: OAI收割
来源:半导体研究所
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