Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes
文献类型：期刊论文
| ; | |
| 作者 | Zhou, PY; Dou, XM; Wu, XF; Ding, K; Li, MF; Ni, HQ; Niu, ZC; Jiang, DS; Sun, BQ |
| 刊名 | scientific reports
 ; SCIENTIFIC REPORTS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 4页码:3633 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26168]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou, PY,Dou, XM,Wu, XF,et al. Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes, Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes[J]. scientific reports, SCIENTIFIC REPORTS,2014, 2014,4, 4:3633, 3633. |
| APA | Zhou, PY.,Dou, XM.,Wu, XF.,Ding, K.,Li, MF.,...&Sun, BQ.(2014).Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.scientific reports,4,3633. |
| MLA | Zhou, PY,et al."Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes".scientific reports 4(2014):3633. |
入库方式： OAI收割
来源：半导体研究所
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