Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells
文献类型：期刊论文
| ; | |
| 作者 | Yang, J; Zhao, DG; Jiang, DS; Jahn, U; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; He, XG; Li, XJ |
| 刊名 | journal of vacuum science & technology a
 ; JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 32期号:5页码:051503 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26196]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells, Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells[J]. journal of vacuum science & technology a, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2014, 2014,32, 32(5):051503, 051503. |
| APA | Yang, J.,Zhao, DG.,Jiang, DS.,Jahn, U.,Chen, P.,...&Yang, H.(2014).Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells.journal of vacuum science & technology a,32(5),051503. |
| MLA | Yang, J,et al."Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells".journal of vacuum science & technology a 32.5(2014):051503. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。