Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells
文献类型：期刊论文
| ; | |
| 作者 | Yang, J; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Le, LC; He, XG; Li, XJ; Yang, H |
| 刊名 | physica status solidi a-applications and materials science
 ; PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 211期号:9页码:2157-2160 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26200]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells, Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells[J]. physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2014, 2014,211, 211(9):2157-2160, 2157-2160. |
| APA | Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2014).Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells.physica status solidi a-applications and materials science,211(9),2157-2160. |
| MLA | Yang, J,et al."Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells".physica status solidi a-applications and materials science 211.9(2014):2157-2160. |
入库方式： OAI收割
来源：半导体研究所
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