Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| ; | |
| 作者 | He, XG; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; Li, XJ; Zhang, SM; Zhu, JJ |
| 刊名 | thin solid films
 ; THIN SOLID FILMS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 564页码:135-139 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26176]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | He, XG,Zhao, DG,Jiang, DS,et al. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition, Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition[J]. thin solid films, THIN SOLID FILMS,2014, 2014,564, 564:135-139, 135-139. |
| APA | He, XG.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition.thin solid films,564,135-139. |
| MLA | He, XG,et al."Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition".thin solid films 564(2014):135-139. |
入库方式： OAI收割
来源：半导体研究所
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