Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties
文献类型：期刊论文
| ; | |
| 作者 | Liang, JR; Wu, MJ; Hu, M; Liu, J; Zhu, NW; Xia, XX; Chen, HD |
| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 23期号:7页码:076801 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26265]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Liang, JR,Wu, MJ,Hu, M,et al. Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties, Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties[J]. chinese physics b, CHINESE PHYSICS B,2014, 2014,23, 23(7):076801, 076801. |
| APA | Liang, JR.,Wu, MJ.,Hu, M.,Liu, J.,Zhu, NW.,...&Chen, HD.(2014).Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties.chinese physics b,23(7),076801. |
| MLA | Liang, JR,et al."Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties".chinese physics b 23.7(2014):076801. |
入库方式： OAI收割
来源：半导体研究所
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