Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well
文献类型：期刊论文
| 作者 | Zhu, LP ; Liu, Y ; Gao, HS ; Qin, XD ; Li, Y ; Wu, Q ; Chen, YH |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2014 |
| 卷号 | 9页码:493 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26206]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhu, LP,Liu, Y,Gao, HS,et al. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well[J]. nanoscale research letters,2014,9:493. |
| APA | Zhu, LP.,Liu, Y.,Gao, HS.,Qin, XD.,Li, Y.,...&Chen, YH.(2014).Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well.nanoscale research letters,9,493. |
| MLA | Zhu, LP,et al."Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well".nanoscale research letters 9(2014):493. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。