Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor
文献类型：期刊论文
| 作者 | Li, W ; Wang, XL ; Qu, SQ ; Wang, Q ; Xiao, HL ; Wang, CM ; Peng, EC ; Hou, X ; Wang, ZG |
| 刊名 | journal of alloys and compounds
 |
| 出版日期 | 2014 |
| 卷号 | 605页码:113-117 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26226]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, W,Wang, XL,Qu, SQ,et al. Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor[J]. journal of alloys and compounds,2014,605:113-117. |
| APA | Li, W.,Wang, XL.,Qu, SQ.,Wang, Q.,Xiao, HL.,...&Wang, ZG.(2014).Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor.journal of alloys and compounds,605,113-117. |
| MLA | Li, W,et al."Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor".journal of alloys and compounds 605(2014):113-117. |
入库方式： OAI收割
来源：半导体研究所
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