Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
文献类型：期刊论文
| 作者 | Barate, P ; Liang, S ; Zhang, TT ; Frougier, J ; Vidal, M ; Renucci, P ; Devaux, X ; Xu, B ; Jaffres, H ; George, JM ; Marie, X ; Hehn, M ; Mangin, S ; Zheng, Y ; Amand, T ; Tao, B ; Han, XF ; Wang, Z ; Lu, Y |
| 刊名 | applied physics letters
 |
| 出版日期 | 2014 |
| 卷号 | 105期号:1页码:012404 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26254]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Barate, P,Liang, S,Zhang, TT,et al. Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods[J]. applied physics letters,2014,105(1):012404. |
| APA | Barate, P.,Liang, S.,Zhang, TT.,Frougier, J.,Vidal, M.,...&Lu, Y.(2014).Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods.applied physics letters,105(1),012404. |
| MLA | Barate, P,et al."Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods".applied physics letters 105.1(2014):012404. |
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来源：半导体研究所
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