中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates

文献类型:期刊论文

;
作者Wei, Tongbo; Zhang, Lian; Ji, Xiaoli; Wang, Junxi; Huo, Ziqiang; Sun, Baojun; Hu, Qiang; Wei, Xuecheng; Duan, Ruifei; Zhao, Lixia
刊名ieee photonics journal ; IEEE PHOTONICS JOURNAL
出版日期2014 ; 2014
卷号6期号:6页码:8200610
学科主题半导体器件 ; 半导体器件
收录类别SCI
语种英语 ; 英语
公开日期2015-03-19 ; 2015-03-19
源URL[http://ir.semi.ac.cn/handle/172111/26008]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Wei, Tongbo,Zhang, Lian,Ji, Xiaoli,et al. Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates, Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates[J]. ieee photonics journal, IEEE PHOTONICS JOURNAL,2014, 2014,6, 6(6):8200610, 8200610.
APA Wei, Tongbo.,Zhang, Lian.,Ji, Xiaoli.,Wang, Junxi.,Huo, Ziqiang.,...&Li, Jinmin.(2014).Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates.ieee photonics journal,6(6),8200610.
MLA Wei, Tongbo,et al."Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates".ieee photonics journal 6.6(2014):8200610.

入库方式: OAI收割

来源:半导体研究所

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