Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography
文献类型：期刊论文
| ; | |
| 作者 | Zhang, Yonghui; Wei, Tongbo; Xiong, Zhuo; Chen, Yu; Zhen, Aigong; Shan, Liang; Zhao, Yun; Hu, Qiang; Li, Jinmin; Wang, Junxi |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 116期号:19页码:194301 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-20 ; 2015-03-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26048]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhang, Yonghui,Wei, Tongbo,Xiong, Zhuo,et al. Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography, Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2014, 2014,116, 116(19):194301, 194301. |
| APA | Zhang, Yonghui.,Wei, Tongbo.,Xiong, Zhuo.,Chen, Yu.,Zhen, Aigong.,...&Wang, Junxi.(2014).Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography.journal of applied physics,116(19),194301. |
| MLA | Zhang, Yonghui,et al."Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography".journal of applied physics 116.19(2014):194301. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。