中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes

文献类型:期刊论文

;
作者Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping
刊名journal of luminescence ; JOURNAL OF LUMINESCENCE
出版日期2014 ; 2014
卷号155页码:238-243
学科主题半导体器件 ; 半导体器件
收录类别SCI
语种英语 ; 英语
公开日期2015-03-19 ; 2015-03-19
源URL[http://ir.semi.ac.cn/handle/172111/26016]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Yang, Yujue,Ma, Ping,Wei, Xuecheng,et al. Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes, Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes[J]. journal of luminescence, JOURNAL OF LUMINESCENCE,2014, 2014,155, 155:238-243, 238-243.
APA Yang, Yujue,Ma, Ping,Wei, Xuecheng,Yan, Dan,Wang, Yafang,&Zeng, Yiping.(2014).Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes.journal of luminescence,155,238-243.
MLA Yang, Yujue,et al."Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes".journal of luminescence 155(2014):238-243.

入库方式: OAI收割

来源:半导体研究所

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