Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes
文献类型:期刊论文
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作者 | Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping |
刊名 | journal of luminescence
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出版日期 | 2014 ; 2014 |
卷号 | 155页码:238-243 |
学科主题 | 半导体器件 ; 半导体器件 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2015-03-19 ; 2015-03-19 |
源URL | [http://ir.semi.ac.cn/handle/172111/26016] ![]() |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Yang, Yujue,Ma, Ping,Wei, Xuecheng,et al. Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes, Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes[J]. journal of luminescence, JOURNAL OF LUMINESCENCE,2014, 2014,155, 155:238-243, 238-243. |
APA | Yang, Yujue,Ma, Ping,Wei, Xuecheng,Yan, Dan,Wang, Yafang,&Zeng, Yiping.(2014).Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes.journal of luminescence,155,238-243. |
MLA | Yang, Yujue,et al."Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes".journal of luminescence 155(2014):238-243. |
入库方式: OAI收割
来源:半导体研究所
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