中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer

文献类型:期刊论文

;
作者Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao
刊名optics express ; OPTICS EXPRESS
出版日期2014 ; 2014
卷号22期号:21页码:a1596-a1603
学科主题半导体器件 ; 半导体器件
收录类别SCI
语种英语 ; 英语
公开日期2015-03-19 ; 2015-03-19
源URL[http://ir.semi.ac.cn/handle/172111/26031]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Yu, Zhi-Guo,Zhao, Li-Xia,Wei, Xue-Cheng,et al. Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer, Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer[J]. optics express, OPTICS EXPRESS,2014, 2014,22, 22(21):a1596-a1603, A1596-A1603.
APA Yu, Zhi-Guo.,Zhao, Li-Xia.,Wei, Xue-Cheng.,Lu, Hong-Xi.,Wang, Jun-Xi.,...&Zhang, Feng.(2014).Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.optics express,22(21),a1596-a1603.
MLA Yu, Zhi-Guo,et al."Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer".optics express 22.21(2014):a1596-a1603.

入库方式: OAI收割

来源:半导体研究所

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