Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst
文献类型：期刊论文
| ; | |
| 作者 | Zhao, Y; Wang, G; Yang, HC; An, TL; Chen, MJ; Yu, F; Tao, L; Yang, JK; Wei, TB; Duan, RF |
| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 23期号:9页码:096802 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26187]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhao, Y,Wang, G,Yang, HC,et al. Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst, Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst[J]. chinese physics b, CHINESE PHYSICS B,2014, 2014,23, 23(9):096802, 096802. |
| APA | Zhao, Y.,Wang, G.,Yang, HC.,An, TL.,Chen, MJ.,...&Sun, LF.(2014).Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst.chinese physics b,23(9),096802. |
| MLA | Zhao, Y,et al."Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst".chinese physics b 23.9(2014):096802. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。