中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

文献类型:期刊论文

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作者Zhang, YH; Wei, TB; Xiong, Z; Shang, L; Tian, YD; Zhao, Y; Zhou, PY; Wang, JX; Li, JM
刊名applied physics letters ; APPLIED PHYSICS LETTERS
出版日期2014 ; 2014
卷号105期号:1页码:013108
学科主题半导体器件 ; 半导体器件
收录类别SCI
语种英语 ; 英语
公开日期2015-03-25 ; 2015-03-25
源URL[http://ir.semi.ac.cn/handle/172111/26256]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Zhang, YH,Wei, TB,Xiong, Z,et al. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography, Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography[J]. applied physics letters, APPLIED PHYSICS LETTERS,2014, 2014,105, 105(1):013108, 013108.
APA Zhang, YH.,Wei, TB.,Xiong, Z.,Shang, L.,Tian, YD.,...&Li, JM.(2014).Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography.applied physics letters,105(1),013108.
MLA Zhang, YH,et al."Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography".applied physics letters 105.1(2014):013108.

入库方式: OAI收割

来源:半导体研究所

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