AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
文献类型：期刊论文
| ; | |
| 作者 | Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX |
| 刊名 | journal of crystal growth
 ; JOURNAL OF CRYSTAL GROWTH
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 395页码:9-13 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26207]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Dong, P,Yan, JC,Zhang, Y,et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency, AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency[J]. journal of crystal growth, JOURNAL OF CRYSTAL GROWTH,2014, 2014,395, 395:9-13, 9-13. |
| APA | Dong, P.,Yan, JC.,Zhang, Y.,Wang, JX.,Zeng, JP.,...&Li, JM.(2014).AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency.journal of crystal growth,395,9-13. |
| MLA | Dong, P,et al."AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency".journal of crystal growth 395(2014):9-13. |
入库方式： OAI收割
来源：半导体研究所
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